UPA1820GR. Аналоги и основные параметры
Наименование производителя: UPA1820GR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 56 ns
Cossⓘ - Выходная емкость: 600 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm
Тип корпуса: TSSOP-8
Аналог (замена) для UPA1820GR
- подборⓘ MOSFET транзистора по параметрам
UPA1820GR даташит
..1. Size:192K renesas
upa1820gr.pdf 

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9.1. Size:189K renesas
upa1804gr.pdf 

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9.2. Size:202K renesas
upa1818gr.pdf 

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9.3. Size:200K renesas
upa1856gr.pdf 

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9.4. Size:201K renesas
upa1857gr.pdf 

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9.5. Size:192K renesas
upa1871gr.pdf 

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9.6. Size:192K renesas
upa1815gr.pdf 

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9.7. Size:191K renesas
upa1809gr.pdf 

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9.8. Size:194K renesas
upa1873 upa1873gr.pdf 

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9.9. Size:227K renesas
upa1890gr.pdf 

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9.10. Size:288K renesas
upa1872bgr.pdf 

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9.11. Size:262K renesas
upa1803gr.pdf 

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9.12. Size:208K renesas
upa1870bgr.pdf 

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9.13. Size:201K renesas
upa1830gr.pdf 

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9.14. Size:268K renesas
upa1874bgr.pdf 

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9.15. Size:192K renesas
upa1808gr.pdf 

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9.16. Size:62K nec
upa1814gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1814 is a switching device which can be 85 driven directly by a 4 V power source. The PA1814 features a low on-state resistance and 1, 5, 8 Drain excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3,
9.17. Size:72K nec
upa1819gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1819 is a switching device that can be driven 85 directly by a 4.0 V power source. This device features a low on-state resistance and 1 Drain1 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2
9.18. Size:105K nec
upa1874gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1874 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1874 is a switching device which can be 85 driven directly by a 2.5-V power source. This device features a low on-state resistance and 1 Drain1 excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3 Sour
9.19. Size:181K nec
upa1855gr.pdf 

UPA1855GR-9JG PCB 24 DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1855 is a switching device which can be driven directly by a 2.5 V power source. 85 The PA1855 features a low on-state resistance and 1
9.20. Size:60K nec
upa1870gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1870 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1870 is a switching device which can be 85 driven directly by a 2.5-V power source. The PA1870 features a low on-state resistance and 1 Drain1 excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3 Sourc
9.21. Size:73K nec
upa1872gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1872 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1872 is a switching device which can be driven directly by a 2.5 V power source. 85 This device features a low on-state resistance and excellent switching characteristics, and is suitable for 1 Drain1 1.2 MAX. 2, 3 Sourc
9.22. Size:73K nec
upa1816gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1816 is a switching device which can be 85 driven directly by a 1.8 V power source. This device features a low on-state resistance and 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2 MAX. 4 G
9.23. Size:72K nec
upa1858gr.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1858 is a switching device, which can be 85 driven directly by a 2.5 V power source. This device features a low on-state resistance and 1 Drain1 excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3 S
9.24. Size:725K cn vbsemi
upa1870bgr.pdf 

UPA1870BGR www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.013 at VGS = 4.5 V Available 7.6 20 RoHS* 0.020 at VGS = 2.5 V 6.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATINGS TA =
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History: NTP2955
| BSS308PE