RFP12P10 Todos los transistores

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 rfp12p08 rfp12p10.pdf

RFP12P08, RFP12P10 Data Sheet January 2002 12A, 80V and 100V, 0.300 Ohm, P-Channel Features Power MOSFETs 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel rDS(ON) = 0.300 enhancement mode silicon gate power field effect transistors SOA is Power Dissipation Limited designed for applications such as switching regulators, switching convertors, motor drivers, r

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 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

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 rfp12n10l.pdf

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

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 rfm12n08l rfm12n10l rfp12n08l.pdf

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 rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf

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 rfm12n18 rfm12n20 rfp12n18 rfp12n20.pdf

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 rfp12n10l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur