RFP12P10 Datasheet and Replacement

RFP12P08, RFP12P10Data Sheet January 200212A, 80V and 100V, 0.300 Ohm, P-Channel FeaturesPower MOSFETs 12A, 80V and 100VThe RFP12P08, and RFP12P10 are P-Channel rDS(ON) = 0.300enhancement mode silicon gate power field effect transistors SOA is Power Dissipation Limiteddesigned for applications such as switching regulators, switching convertors, motor drivers, r

RFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet January 200217A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.063, VGS = 10VDRAIN DRAIN (FLANGE)GATE - rDS(ON) = 0.071, VGS = 5V (FLANGE)GATE Simulation ModelsSOURCE- Temperature Compensate

RFP12N10LData Sheet April 200512A, 100V, 0.200 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 12A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.200power field effect transistors specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, automotiv

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur