UPA1919 Todos los transistores

 ..1. Size:236K  renesas
 upa1919.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:187K  renesas
 upa1912.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:200K  renesas
 upa1917.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:63K  nec
 upa1914.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1914 is a switching device which can be driven +0.1 0.32 0.05 directly by a 4 V power source. 0.16+0.1 0.06 The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications

 8.4. Size:70K  nec
 upa1913.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1913 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1913 features a low on-state resistance and excellent switching characteristics, and is suitable

 8.5. Size:58K  nec
 upa1916.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1916 is a switching device which can be driven +0.1 0.32 0.05 directly by a 1.8 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable for

 8.6. Size:378K  nec
 upa1911a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1911A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1911A is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5 V power source. 0.16+0.1 0.06 The PA1911A features a low on-state resistance and excellent switching characteristics, and is suita

 8.7. Size:65K  nec
 upa1915.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1915 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1915 features a low on-state resistance and excellent switching characteristics, and is suitable f

 8.8. Size:68K  nec
 upa1918.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1918 is a switching device, which can be driven +0.1 directly by a 4.0 V power source. 0.32 0.05 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable fo