All MOSFET. UPA1919 Datasheet

 

UPA1919 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UPA1919
   Marking Code: TX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SC-95

 UPA1919 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UPA1919 Datasheet (PDF)

 ..1. Size:236K  renesas
upa1919.pdf

UPA1919
UPA1919

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:187K  renesas
upa1912.pdf

UPA1919
UPA1919

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:200K  renesas
upa1917.pdf

UPA1919
UPA1919

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:63K  nec
upa1914.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1914P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1914 is a switching device which can be driven+0.10.32 0.05directly by a 4 V power source. 0.16+0.10.06 The PA1914 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications

 8.4. Size:70K  nec
upa1913.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1913 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1913 features a low on-state resistance and excellentswitching characteristics, and is suitable

 8.5. Size:58K  nec
upa1916.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1916P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1916 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable for

 8.6. Size:378K  nec
upa1911a.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1911AP-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1911A is a switching device which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 The PA1911A features a low on-state resistance and excellentswitching characteristics, and is suita

 8.7. Size:65K  nec
upa1915.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1915P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1915 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1915 features a low on-state resistance and excellentswitching characteristics, and is suitable f

 8.8. Size:68K  nec
upa1918.pdf

UPA1919
UPA1919

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1918P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1918 is a switching device, which can be driven+0.1directly by a 4.0 V power source. 0.32 0.050.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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