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UPA2550T1H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UPA2550T1H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
   Qgⓘ - Carga de la puerta: 8.7 nC
   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: 8-VSOF

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UPA2550T1H Datasheet (PDF)

 ..1. Size:262K  renesas
upa2550 upa2550t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:260K  renesas
upa2560 upa2560t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:217K  renesas
upa2562t1h.pdf

UPA2550T1H
UPA2550T1H

Preliminary Data Sheet PA2562T1H R07DS0007EJ0100Rev.1.00Jul 08, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2562 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

 9.3. Size:290K  renesas
upa2593t1h.pdf

UPA2550T1H
UPA2550T1H

Preliminary Data Sheet R07DS0012EJ0200 PA2593 Rev.2.00Sep 10, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 4.5 V drive available

 9.4. Size:316K  renesas
upa2592t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:266K  renesas
upa2521t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:316K  renesas
upa2591t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:330K  renesas
upa2590t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:264K  renesas
upa2520t1h.pdf

UPA2550T1H
UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:223K  renesas
upa2561t1h.pdf

UPA2550T1H
UPA2550T1H

Preliminary Data Sheet PA2561T1H R07DS0006EJ0100Rev.1.00Jul 08, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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