All MOSFET. UPA2550T1H Datasheet

 

UPA2550T1H Datasheet and Replacement


   Type Designator: UPA2550T1H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: 8-VSOF
 

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UPA2550T1H Datasheet (PDF)

 ..1. Size:262K  renesas
upa2550 upa2550t1h.pdf pdf_icon

UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:260K  renesas
upa2560 upa2560t1h.pdf pdf_icon

UPA2550T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:217K  renesas
upa2562t1h.pdf pdf_icon

UPA2550T1H

Preliminary Data Sheet PA2562T1H R07DS0007EJ0100Rev.1.00Jul 08, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2562 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

 9.3. Size:290K  renesas
upa2593t1h.pdf pdf_icon

UPA2550T1H

Preliminary Data Sheet R07DS0012EJ0200 PA2593 Rev.2.00Sep 10, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 4.5 V drive available

Datasheet: UPA2452TL , UPA2462T1Q , UPA2463T1Q , UPA2464T1Q , UPA2465T1Q , UPA2520T1H , UPA2521T1H , UPA2550 , IRF1405 , UPA2560 , UPA2560T1H , UPA2561T1H , UPA2562T1H , UPA2590T1H , UPA2591T1H , UPA2592T1H , UPA2593T1H .

History: RP1A090ZP | WML15N80M3 | IRFU3709ZC | DH020N03B | KIA12N65H | RU30160R | SI2333CDS

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