RU7088R3 Todos los transistores

 

RU7088R3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU7088R3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220S
 

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RU7088R3 Datasheet (PDF)

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RU7088R3

RU7088R3N-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,Insulation Slug RDS (ON) =6.5m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Gre

 7.1. Size:295K  ruichips
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RU7088R3

RU7088RN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A, RDS (ON) =6.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO220Applications Switching Application Syste

 7.2. Size:757K  cn vbsemi
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RU7088R3

RU7088Rwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Uni

 8.1. Size:306K  ruichips
 ru7088a.pdf pdf_icon

RU7088R3

RU7088AN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/88A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications The device is suitable for use inPWM ,load switching and generalpurpose applications.N-Channel

MOSTRAR MÁS

Otros transistores... UPA2592T1H , UPA2593T1H , UPA2650T1E , UPA2670T1R , UPA2672T1R , UPA2680T1E , UPA2700GR , STQ1NC45 , IRFZ44N , PTP04N04N , OSG55R190AF , OSG55R190DF , OSG55R190FF , OSG55R190PF , MDU2657 , JCS4N60V , JCS4N60R .

History: FDB2552F085

 

 
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