OSG55R190PF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OSG55R190PF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 VQgⓘ - Carga de la puerta: 17.7 nC
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 125.9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de OSG55R190PF MOSFET
OSG55R190PF PDF Specs
osg55r190pf.pdf
OSG55R190PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf
OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera... See More ⇒
osg55r190ff.pdf
OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
osg55r190af.pdf
OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
Otros transistores... UPA2680T1E , UPA2700GR , STQ1NC45 , RU7088R3 , PTP04N04N , OSG55R190AF , OSG55R190DF , OSG55R190FF , IRF540N , MDU2657 , JCS4N60V , JCS4N60R , JCS4N60S , JCS4N60B , JCS4N60C , JCS4N60F , CMP1405 .
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