OSG55R190PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG55R190PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.7 nC
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 125.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220

OSG55R190PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS