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OSG55R190PF Spec and Replacement


   Type Designator: OSG55R190PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 125.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

 OSG55R190PF substitution

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OSG55R190PF Specs

 ..1. Size:916K  oriental semi
 osg55r190pf.pdf pdf_icon

OSG55R190PF

OSG55R190PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 ..2. Size:1119K  oriental semi
 osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf pdf_icon

OSG55R190PF

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera... See More ⇒

 5.1. Size:939K  oriental semi
 osg55r190ff.pdf pdf_icon

OSG55R190PF

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:401K  oriental semi
 osg55r190af.pdf pdf_icon

OSG55R190PF

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: UPA2680T1E , UPA2700GR , STQ1NC45 , RU7088R3 , PTP04N04N , OSG55R190AF , OSG55R190DF , OSG55R190FF , IRF540N , MDU2657 , JCS4N60V , JCS4N60R , JCS4N60S , JCS4N60B , JCS4N60C , JCS4N60F , CMP1405 .

Keywords - OSG55R190PF MOSFET specs

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