JCS4N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: JCS4N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220MF

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JCS4N60F Datasheet (PDF)

..1. Size:1304K jilin sino
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

..2. Size:1259K jilin sino
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

..3. Size:948K jilin sino
jcs4n60f.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

0.1. Size:1019K 1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

0.2. Size:1045K jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

8.1. Size:831K jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf

N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

8.2. Size:1447K jilin sino
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

8.3. Size:779K jilin sino
jcs4n65f-c-r-v.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N65C \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

8.4. Size:1598K jilin sino
jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

N RN-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V RdsonVgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

8.5. Size:1866K jilin sino
jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

RJCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_Typ 2.1 Vgs=1Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switchingmode power supply Electronic ballastLED LED power supply FEATURES Low g

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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