UPA2730TP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2739T1A P-channel MOSFET R07DS0885EJ0102Rev.1.0230 V, 85 A, 2.8 m Nov 28, 2012Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

Data SheetPA2736GR P-channel MOSFET R07DS0868EJ0100Rev.1.0030 V, 14 A, 7.0 m Aug 28, 2012Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

Data SheetPA2735GR P-channel MOSFET R07DS0867EJ0100Rev.1.0030 V, 16 A, 5.0 m Aug 28, 2012Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2737GR P-channel MOSFET R07DS0869EJ0100Rev.1.0030 V, 11 A, 13 m Aug 28, 2012Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)

Data SheetPA2738GR P-channel MOSFET R07DS0870EJ0100Rev.1.0030 V, 10 A, 15 m Aug 28, 2012Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2733GRSWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5designed for power management applications of notebook 1, 2, 3 : Source4 : Gatecomputers and so on. 5, 6, 7, 8: DrainFEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2731T1ASWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 18battery protection circuit. 2 73 6FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.