UPA2731UT1A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2731UT1A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 44
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16
nS
Cossⓘ - Capacitancia
de salida: 1540
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033
Ohm
Paquete / Cubierta: HVSON
Búsqueda de reemplazo de MOSFET UPA2731UT1A
Principales características: UPA2731UT1A
..1. Size:260K renesas
upa2731ut1a.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
7.1. Size:178K nec
upa2731t1a.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2731T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 1 8 battery protection circuit. 2 7 3 6 FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.
8.1. Size:265K renesas
upa2734gr.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:139K renesas
upa2739t1a.pdf 
Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG
8.3. Size:193K renesas
upa2736gr.pdf 
Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14
8.4. Size:181K renesas
upa2735gr.pdf 
Data Sheet PA2735GR P-channel MOSFET R07DS0867EJ0100 Rev.1.00 30 V, 16 A, 5.0 m Aug 28, 2012 Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16
8.5. Size:260K renesas
upa2732ut1a.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:261K renesas
upa2732t1a.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:191K renesas
upa2737gr.pdf 
Data Sheet PA2737GR P-channel MOSFET R07DS0869EJ0100 Rev.1.00 30 V, 11 A, 13 m Aug 28, 2012 Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)
8.8. Size:208K renesas
upa2730tp.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:192K renesas
upa2738gr.pdf 
Data Sheet PA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 30 V, 10 A, 15 m Aug 28, 2012 Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)
8.10. Size:148K nec
upa2733gr.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 Source 4 Gate computers and so on. 5, 6, 7, 8 Drain FEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M
Otros transistores... UPA2723UT1A
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.