All MOSFET. UPA2731UT1A Equivalents Search

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2731T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 1 8 battery protection circuit. 2 7 3 6 FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG... See More ⇒

Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14 ... See More ⇒

Data Sheet PA2735GR P-channel MOSFET R07DS0867EJ0100 Rev.1.00 30 V, 16 A, 5.0 m Aug 28, 2012 Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16 ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Data Sheet PA2737GR P-channel MOSFET R07DS0869EJ0100 Rev.1.00 30 V, 11 A, 13 m Aug 28, 2012 Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Data Sheet PA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 30 V, 10 A, 15 m Aug 28, 2012 Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 Source 4 Gate computers and so on. 5, 6, 7, 8 Drain FEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M... See More ⇒