RFP25N05L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RFP25N05L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 50 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 80(max) nC
   Tiempo de subida (tr): 35 nS
   Resistencia entre drenaje y fuente RDS(on): 0.047 Ohm
   Paquete / Cubierta: TO220AB

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RFP25N05L Datasheet (PDF)

..1. Size:46K intersil
rfp25n05l.pdf

RFP25N05LData Sheet July 1999 File Number 2270.325A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 25A, 50VThe RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse)This process, which uses feature sizes approaching those ofLSI integrated circuits gives optim

6.1. Size:103K intersil
rfp25n05.pdf

RFP25N05Data Sheet July 1999 File Number 2112.425A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFET 25A, 50VThe RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047using the MegaFET process. This process which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum utilization of silicon, resu

6.2. Size:258K inchange semiconductor
rfp25n05.pdf

isc N-Channel MOSFET Transistor RFP25N05FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

7.1. Size:106K intersil
rfp25n06 rf1s25n06sm.pdf

RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

Otros transistores... RFP15N05L , RFP15N06L , RFP15N08L , RFP15P05 , RFP15P05SM , RFP15P06 , RFP22N10 , RFP25N05 , HY1906P , RFP25N06 , RFP2N08L , RFP2N10L , RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE .

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