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RFP25N05L Spec and Replacement


   Type Designator: RFP25N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO220AB

 RFP25N05L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP25N05L Specs

 ..1. Size:46K  intersil
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RFP25N05L

RFP25N05L Data Sheet July 1999 File Number 2270.3 25A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFET 25A, 50V The RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047 MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse) This process, which uses feature sizes approaching those of LSI integrated circuits gives optim... See More ⇒

 6.1. Size:103K  intersil
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RFP25N05L

RFP25N05 Data Sheet July 1999 File Number 2112.4 25A, 50V, 0.047 Ohm, N-Channel Power Features MOSFET 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047 using the MegaFET process. This process which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resu... See More ⇒

 6.2. Size:258K  inchange semiconductor
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RFP25N05L

isc N-Channel MOSFET Transistor RFP25N05 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 7.1. Size:106K  intersil
rfp25n06 rf1s25n06sm.pdf pdf_icon

RFP25N05L

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili... See More ⇒

Detailed specifications: RFP15N05L , RFP15N06L , RFP15N08L , RFP15P05 , RFP15P05SM , RFP15P06 , RFP22N10 , RFP25N05 , IRFP450 , RFP25N06 , RFP2N08L , RFP2N10L , RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE .

Keywords - RFP25N05L MOSFET specs

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