All MOSFET. RFP25N05L Datasheet

 

RFP25N05L Datasheet and Replacement


   Type Designator: RFP25N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80(max) nC
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO220AB
 

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RFP25N05L Datasheet (PDF)

 ..1. Size:46K  intersil
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RFP25N05L

RFP25N05LData Sheet July 1999 File Number 2270.325A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 25A, 50VThe RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse)This process, which uses feature sizes approaching those ofLSI integrated circuits gives optim

 6.1. Size:103K  intersil
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RFP25N05L

RFP25N05Data Sheet July 1999 File Number 2112.425A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFET 25A, 50VThe RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047using the MegaFET process. This process which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum utilization of silicon, resu

 6.2. Size:258K  inchange semiconductor
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RFP25N05L

isc N-Channel MOSFET Transistor RFP25N05FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 7.1. Size:106K  intersil
rfp25n06 rf1s25n06sm.pdf pdf_icon

RFP25N05L

RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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