RFP25N05L
MOSFET. Datasheet pdf. Equivalent
Type Designator: RFP25N05L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 80(max)
nC
trⓘ - Rise Time: 35
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047
Ohm
Package:
TO220AB
RFP25N05L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFP25N05L
Datasheet (PDF)
..1. Size:46K intersil
rfp25n05l.pdf
RFP25N05LData Sheet July 1999 File Number 2270.325A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 25A, 50VThe RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse)This process, which uses feature sizes approaching those ofLSI integrated circuits gives optim
6.1. Size:103K intersil
rfp25n05.pdf
RFP25N05Data Sheet July 1999 File Number 2112.425A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFET 25A, 50VThe RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047using the MegaFET process. This process which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum utilization of silicon, resu
6.2. Size:258K inchange semiconductor
rfp25n05.pdf
isc N-Channel MOSFET Transistor RFP25N05FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
7.1. Size:106K intersil
rfp25n06 rf1s25n06sm.pdf
RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
Datasheet: RFP15N05L
, RFP15N06L
, RFP15N08L
, RFP15P05
, RFP15P05SM
, RFP15P06
, RFP22N10
, RFP25N05
, IRFB3607
, RFP25N06
, RFP2N08L
, RFP2N10L
, RFP2N20
, RFP2N20L
, RFP3055
, RFP3055LE
, RFP30N06LE
.