RFP25N06 Todos los transistores

 ..1. Size:106K  intersil
 rfp25n06 rf1s25n06sm.pdf

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

 7.1. Size:103K  intersil
 rfp25n05.pdf

RFP25N05 Data Sheet July 1999 File Number 2112.4 25A, 50V, 0.047 Ohm, N-Channel Power Features MOSFET 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047 using the MegaFET process. This process which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resu

 7.2. Size:46K  intersil
 rfp25n05l.pdf

RFP25N05L Data Sheet July 1999 File Number 2270.3 25A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFET 25A, 50V The RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047 MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse) This process, which uses feature sizes approaching those of LSI integrated circuits gives optim

 7.3. Size:258K  inchange semiconductor
 rfp25n05.pdf

isc N-Channel MOSFET Transistor RFP25N05 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR