RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

RFP25N05Data Sheet July 1999 File Number 2112.425A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFET 25A, 50VThe RFP25N05 N-channel power MOSFET is manufactured rDS(ON) = 0.047using the MegaFET process. This process which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum utilization of silicon, resu

RFP25N05LData Sheet July 1999 File Number 2270.325A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 25A, 50VThe RFP25N05L is an N-Channel logic level power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. UIS SOA Rating Curve (Single Pulse)This process, which uses feature sizes approaching those ofLSI integrated circuits gives optim

isc N-Channel MOSFET Transistor RFP25N05FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR