UPA2763 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UPA2763
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: HVSON

Búsqueda de reemplazo de MOSFET UPA2763

UPA2763 Datasheet (PDF)

..1. Size:237K renesas
upa2763.pdf

Preliminary Data Sheet PA2763 R07DS0003EJ0100Rev.1.00May 31, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

8.1. Size:198K renesas
upa2761ugr.pdf

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

8.2. Size:140K renesas
upa2766t1a.pdf

Data SheetPA2766T1A N-channel MOSFET R07DS0883EJ0102Rev.1.0230 V , 130 A , 0.88 m Nov 28, 2012Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4

8.3. Size:140K renesas
upa2765t1a.pdf

Data SheetPA2765T1A N-channel MOSFET R07DS0882EJ0102Rev.1.0230 V , 100 A , 1.3 m Nov 28, 2012Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5

8.4. Size:199K renesas
upa2762ugr.pdf

Preliminary Data Sheet PA2762UGR R07DS0011EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10

8.5. Size:138K renesas
upa2764t1a.pdf

Data SheetPA2764T1A N-channel MOSFET R07DS0881EJ0102Rev.1.0230 V , 130 A , 1.10 m Nov 28, 2012Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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