UPA2763 Datasheet. Specs and Replacement

Type Designator: UPA2763  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: HVSON

  📄📄 Copy 

UPA2763 substitution

- MOSFET ⓘ Cross-Reference Search

 

UPA2763 datasheet

 ..1. Size:237K  renesas
 upa2763.pdf pdf_icon

UPA2763

Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A) ... See More ⇒

 8.1. Size:198K  renesas
 upa2761ugr.pdf pdf_icon

UPA2763

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A... See More ⇒

 8.2. Size:140K  renesas
 upa2766t1a.pdf pdf_icon

UPA2763

Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4... See More ⇒

 8.3. Size:140K  renesas
 upa2765t1a.pdf pdf_icon

UPA2763

Data Sheet PA2765T1A N-channel MOSFET R07DS0882EJ0102 Rev.1.02 30 V , 100 A , 1.3 m Nov 28, 2012 Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5 ... See More ⇒

SHOW MORE

Detailed specifications: UPA2753GR, UPA2754GR, UPA2755AGR, UPA2755GR, UPA2756GR, UPA2757GR, UPA2761UGR, UPA2762UGR, 20N50, UPA2764T1A, UPA2765T1A, UPA2766T1A, UPA2770GR, UPA2780GR, UPA2781GR, UPA2782GR, UPA2790GR

Keywords - UPA2763 MOSFET specs

 UPA2763 cross reference

 UPA2763 equivalent finder

 UPA2763 pdf lookup

 UPA2763 substitution

 UPA2763 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs