RFP2N08L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP2N08L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 80 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm

Encapsulados: TO220AB

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RFP2N08L datasheet

 ..1. Size:40K  intersil
 rfp2n08l rfp2n10l.pdf pdf_icon

RFP2N08L

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, Features N-Channel Power MOSFETs 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050 mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drives designed for use with logic level (5V) driving sources i

 7.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf pdf_icon

RFP2N08L

 9.1. Size:342K  fairchild semi
 rfp2n20l.pdf pdf_icon

RFP2N08L

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom

 9.2. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf pdf_icon

RFP2N08L

MOSTRAR MÁS

Otros transistores... RFP15N08L, RFP15P05, RFP15P05SM, RFP15P06, RFP22N10, RFP25N05, RFP25N05L, RFP25N06, AO4407, RFP2N10L, RFP2N20, RFP2N20L, RFP3055, RFP3055LE, RFP30N06LE, RFP30P05, RFP30P06