RFP2N08L
MOSFET. Datasheet pdf. Equivalent
Type Designator: RFP2N08L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 80(max)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05
Ohm
Package:
TO220AB
RFP2N08L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFP2N08L
Datasheet (PDF)
..1. Size:40K intersil
rfp2n08l rfp2n10l.pdf 
RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i
9.1. Size:342K fairchild semi
rfp2n20l.pdf
RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom
9.3. Size:40K intersil
rfp2n20.pdf
RFP2N20Data Sheet July 1999 File Number 2881.22A, 200V, 3.500 Ohm, N-Channel Power FeaturesMOSFET 2A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistors designed for applications suchSymbolas switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingDtransi
Datasheet: RFP15N08L
, RFP15P05
, RFP15P05SM
, RFP15P06
, RFP22N10
, RFP25N05
, RFP25N05L
, RFP25N06
, 20N50
, RFP2N10L
, RFP2N20
, RFP2N20L
, RFP3055
, RFP3055LE
, RFP30N06LE
, RFP30P05
, RFP30P06
.
