RFP2N08L Datasheet and Replacement
Type Designator: RFP2N08L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 80(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO220AB
RFP2N08L substitution
RFP2N08L Datasheet (PDF)
rfp2n08l rfp2n10l.pdf

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i
rfp2n20l.pdf

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SI2302-TP | FRK460R | 2SJ358C | KI2302 | SM1A23NSD | FRK9150H
Keywords - RFP2N08L MOSFET datasheet
RFP2N08L cross reference
RFP2N08L equivalent finder
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RFP2N08L replacement
History: SI2302-TP | FRK460R | 2SJ358C | KI2302 | SM1A23NSD | FRK9150H



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