All MOSFET. RFP2N08L Datasheet

 

RFP2N08L Datasheet and Replacement


   Type Designator: RFP2N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO220AB
 

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RFP2N08L Datasheet (PDF)

 ..1. Size:40K  intersil
 rfp2n08l rfp2n10l.pdf pdf_icon

RFP2N08L

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i

 7.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf pdf_icon

RFP2N08L

 9.1. Size:342K  fairchild semi
 rfp2n20l.pdf pdf_icon

RFP2N08L

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom

 9.2. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf pdf_icon

RFP2N08L

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Datasheet: RFP15N08L , RFP15P05 , RFP15P05SM , RFP15P06 , RFP22N10 , RFP25N05 , RFP25N05L , RFP25N06 , P60NF06 , RFP2N10L , RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 .

Keywords - RFP2N08L MOSFET datasheet

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