UPA2764T1A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UPA2764T1A Datasheet (PDF)

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Data SheetPA2764T1A N-channel MOSFET R07DS0881EJ0102Rev.1.0230 V , 130 A , 1.10 m Nov 28, 2012Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

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Preliminary Data Sheet PA2763 R07DS0003EJ0100Rev.1.00May 31, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

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Preliminary Data Sheet PA2761UGR R07DS0010EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

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Data SheetPA2766T1A N-channel MOSFET R07DS0883EJ0102Rev.1.0230 V , 130 A , 0.88 m Nov 28, 2012Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4