UPA2764T1A - аналоги, параметры транзистора - Справочник транзисторов

UPA2764T1A даташит

..1. Size:138K renesas
upa2764t1a.pdf pdf_icon

Data Sheet PA2764T1A N-channel MOSFET R07DS0881EJ0102 Rev.1.02 30 V , 130 A , 1.10 m Nov 28, 2012 Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

8.1. Size:237K renesas
upa2763.pdf pdf_icon

Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

8.2. Size:198K renesas
upa2761ugr.pdf pdf_icon

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

8.3. Size:140K renesas
upa2766t1a.pdf pdf_icon

Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4