UPA2816T1S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UPA2816T1S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 33.4 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: HWSON8

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UPA2816T1S Datasheet (PDF)

..1. Size:140K renesas
upa2816t1s.pdf

Data SheetPA2816T1S R07DS0778EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -

8.1. Size:165K renesas
upa2812t1l.pdf

Data SheetPA2812T1L R07DS0762EJ0101P-channel MOSFEF Rev.1.01May 28, 201330 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30

8.2. Size:220K renesas
upa2811t1l.pdf

Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00Jan 11, 2011MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A)

8.3. Size:268K renesas
upa2810t1l.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. Size:159K renesas
upa2814t1s.pdf

Data SheetPA2814T1S R07DS0776EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24

8.5. Size:184K renesas
upa2813t1l.pdf

Data SheetPA2813T1L R07DS0763EJ0102P-channel MOSFET Rev.1.02May. 28, 201330 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2

8.6. Size:181K renesas
upa2815t1s.pdf

Data SheetPA2815T1S R07DS0777EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A

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