Справочник MOSFET. UPA2816T1S

 

UPA2816T1S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA2816T1S
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33.4 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 620 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0155 Ohm
   Тип корпуса: HWSON8

 Аналог (замена) для UPA2816T1S

 

 

UPA2816T1S Datasheet (PDF)

 ..1. Size:140K  renesas
 upa2816t1s.pdf

UPA2816T1S UPA2816T1S

Data SheetPA2816T1S R07DS0778EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -

 8.1. Size:165K  renesas
 upa2812t1l.pdf

UPA2816T1S UPA2816T1S

Data SheetPA2812T1L R07DS0762EJ0101P-channel MOSFEF Rev.1.01May 28, 201330 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30

 8.2. Size:220K  renesas
 upa2811t1l.pdf

UPA2816T1S UPA2816T1S

Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00Jan 11, 2011MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A)

 8.3. Size:268K  renesas
 upa2810t1l.pdf

UPA2816T1S UPA2816T1S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:159K  renesas
 upa2814t1s.pdf

UPA2816T1S UPA2816T1S

Data SheetPA2814T1S R07DS0776EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24

 8.5. Size:184K  renesas
 upa2813t1l.pdf

UPA2816T1S UPA2816T1S

Data SheetPA2813T1L R07DS0763EJ0102P-channel MOSFET Rev.1.02May. 28, 201330 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2

 8.6. Size:181K  renesas
 upa2815t1s.pdf

UPA2816T1S UPA2816T1S

Data SheetPA2815T1S R07DS0777EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A

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