UPA2822T1L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2822T1L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 1350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Encapsulados: HVSON
Búsqueda de reemplazo de UPA2822T1L MOSFET
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UPA2822T1L datasheet
upa2822t1l.pdf
Data Sheet PA2822T1L R07DS0754EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =
upa2820t1s.pdf
Preliminary Data Sheet PA2820T1S R07DS0751EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS
upa2825t1s.pdf
Preliminary Data Sheet PA2825T1S R07DS0755EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS
upa2821t1l.pdf
PreliminaryData Sheet PA2821T1L R07DS0753EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS
Otros transistores... UPA2811T1L , UPA2812T1L , UPA2813T1L , UPA2814T1S , UPA2815T1S , UPA2816T1S , UPA2820T1S , UPA2821T1L , AO4407A , UPA2825T1S , UPA2826T1S , UPA3753GR , UPA503CT , UPA572CT , UPA573CT , UPA602CT , UPA603CT .
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