RFP2N20L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP2N20L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 60 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: TO220AB

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RFP2N20L datasheet

 ..1. Size:342K  fairchild semi
 rfp2n20l.pdf pdf_icon

RFP2N20L

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom

 ..2. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf pdf_icon

RFP2N20L

 7.1. Size:40K  intersil
 rfp2n20.pdf pdf_icon

RFP2N20L

RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power Features MOSFET 2A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistors designed for applications such Symbol as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching D transi

 9.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf pdf_icon

RFP2N20L

MOSTRAR MÁS

Otros transistores... RFP15P06, RFP22N10, RFP25N05, RFP25N05L, RFP25N06, RFP2N08L, RFP2N10L, RFP2N20, IRFP250, RFP3055, RFP3055LE, RFP30N06LE, RFP30P05, RFP30P06, RFP40N10, RFP40N10LE, RFP45N06