Справочник MOSFET. RFP2N20L

 

RFP2N20L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RFP2N20L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 60(max) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для RFP2N20L

 

 

RFP2N20L Datasheet (PDF)

 ..1. Size:342K  fairchild semi
 rfp2n20l.pdf

RFP2N20L RFP2N20L

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom

 ..2. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf

RFP2N20L RFP2N20L

 7.1. Size:40K  intersil
 rfp2n20.pdf

RFP2N20L RFP2N20L

RFP2N20Data Sheet July 1999 File Number 2881.22A, 200V, 3.500 Ohm, N-Channel Power FeaturesMOSFET 2A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistors designed for applications suchSymbolas switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingDtransi

 9.1. Size:87K  njs
 rfp2n08 rfp2n10.pdf

RFP2N20L RFP2N20L

 9.2. Size:40K  intersil
 rfp2n08l rfp2n10l.pdf

RFP2N20L RFP2N20L

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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