US6M11 Todos los transistores

 

US6M11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: US6M11

Código: M11

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.7 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 1.8 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 18 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TUMT6

Búsqueda de reemplazo de MOSFET US6M11

 

US6M11 Datasheet (PDF)

1.1. us6m11.pdf Size:198K _update-mosfet

US6M11
US6M11

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4) ∗1 Packa

1.2. us6m11.pdf Size:267K _rohm

US6M11
US6M11

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4) ?1 Packaging

 5.1. us6m1.pdf Size:93K _update-mosfet

US6M11
US6M11

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

5.2. us6m1.pdf Size:107K _rohm

US6M11
US6M11

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Taping

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top

 


US6M11
  US6M11
  US6M11
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: NTGD3148NT1G | NTGD3147FT1G | NTF6P02T3G | NTF5P03 | NTF3055L175T1G | NTF3055L108T1G | NTF3055-160T3LF | NTF3055-160T1 | NTF3055-100T1 | NTF2955T1G | NTF2955PT1G | NTDV5804N | NTDV3055L104 | NTDV20P06L | NTDV20N06L |

 

 

 
Back to Top