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US6M11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: US6M11

Código: M11

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.7 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 1.8 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 18 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TUMT6

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US6M11 Datasheet (PDF)

1.1. us6m11.pdf Size:198K _update-mosfet

US6M11
US6M11

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4) ∗1 Packa

1.2. us6m11.pdf Size:267K _rohm

US6M11
US6M11

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4) ?1 Packaging

 5.1. us6m1.pdf Size:93K _update-mosfet

US6M11
US6M11

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

5.2. us6m1.pdf Size:107K _rohm

US6M11
US6M11

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Taping

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