All MOSFET. US6M11 Datasheet

 

US6M11 Datasheet and Replacement


   Type Designator: US6M11
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TUMT6
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US6M11 Datasheet (PDF)

 ..1. Size:198K  rohm
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US6M11

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4)1 Packa

 9.1. Size:93K  rohm
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US6M11

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | FCPF7N60YDTU | AP6679GI-HF | NTD4855N-1G | DM12N65C | SM6A12NSFP

Keywords - US6M11 MOSFET datasheet

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