RFP30N06LE Todos los transistores

 ..1. Size:188K  fairchild semi
 rfp30n06le rf1s30n06lesm.pdf

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

 ..2. Size:1144K  cn vbsemi
 rfp30n06le.pdf

RFP30N06LE www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

 9.1. Size:299K  international rectifier
 irfp3077pbf.pdf

PD - 97126 IRFP3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-247 ID (Silicon Limited) 200A c l Improved Gate, Avalanche and Dynamic dV/d

 9.2. Size:361K  international rectifier
 irfp3006.pdf

IRFP3006PbF VDSS 60V D RDS(on) typ. 2.1m max. 2.5m S G D 270A ID (Silicon Limited) G ID (Package Limited) 195A S TO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

 9.3. Size:414K  fairchild semi
 rfd3055le rfd3055lesm rfp3055le.pdf

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs 11A, 60V These N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those of LSI

 9.4. Size:365K  fairchild semi
 rfg30p05 rfp30p05 rf1s30p05sm.pdf

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 9.5. Size:386K  fairchild semi
 rfg30p06 rfp30p06 rf1s30p06sm.pdf

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 9.6. Size:114K  harris semi
 rfd3055-sm rfp3055.pdf

RFD3055, RFD3055SM S E M I C O N D U C T O R RFP3055 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 12A, 60V TOP VIEW rDS(ON) = 0.150 SOURCE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve GATE UIS Rating Curve +175oC Operating Temperature JED

 9.7. Size:840K  cn vbsemi
 rfp30p06.pdf

RFP30P06 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0600 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.0850 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S TO-220AB Power Swi

 9.8. Size:242K  inchange semiconductor
 irfp3077.pdf

isc N-Channel MOSFET Transistor IRFP3077 IIRFP3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc

 9.9. Size:243K  inchange semiconductor
 irfp3006.pdf

isc N-Channel MOSFET Transistor IRFP3006 IIRFP3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit