All MOSFET. RFP30N06LE Datasheet

 

RFP30N06LE MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP30N06LE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 96 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.047 Ohm

Package: TO220AB

RFP30N06LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP30N06LE Datasheet (PDF)

1.1. rfp30n06le rf1s30n06lesm.pdf Size:188K _fairchild_semi

RFP30N06LE

5.1. irfp3077pbf.pdf Size:299K _upd-mosfet

RFP30N06LE
RFP30N06LE

PD - 97126 IRFP3077PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m : l Hard Switched and High Frequency Circuits max. 3.3m : Benefits G l Worldwide Best RDS(on) in TO-247 ID (Silicon Limited) 200A c l Improved Gate, Avalanche and Dynamic dV/d

5.2. irfp3006.pdf Size:361K _upd-mosfet

RFP30N06LE
RFP30N06LE

IRFP3006PbF VDSS 60V D RDS(on) typ. 2.1m max. 2.5m S G D 270A ID (Silicon Limited) G ID (Package Limited) 195A S TO-247AC Applications G D S  High Efficiency Synchronous Rectification in SMPS Gate Drain Source  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved

 5.3. rfd3055le rfd3055lesm rfp3055le.pdf Size:414K _fairchild_semi

RFP30N06LE
RFP30N06LE

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs • 11A, 60V These N-Channel enhancement-mode power MOSFETs are • rDS(ON) = 0.107Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those of LSI

5.4. rfg30p06 rfp30p06 rf1s30p06sm.pdf Size:386K _fairchild_semi

RFP30N06LE
RFP30N06LE

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 5.5. rfg30p05 rfp30p05 rf1s30p05sm.pdf Size:365K _fairchild_semi

RFP30N06LE
RFP30N06LE

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 50V These are P-Channel power MOSFETs manufactured • rDS(ON) = 0.065Ω using the MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

5.6. rfd3055-sm rfp3055.pdf Size:114K _harris_semi

RFP30N06LE
RFP30N06LE

RFD3055, RFD3055SM S E M I C O N D U C T O R RFP3055 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB • 12A, 60V TOP VIEW • rDS(ON) = 0.150Ω SOURCE • Temperature Compensating PSPICE Model DRAIN • Peak Current vs Pulse Width Curve GATE • UIS Rating Curve • +175oC Operating Temperature JED

Datasheet: RFP25N05L , RFP25N06 , RFP2N08L , RFP2N10L , RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , IRFP250N , RFP30P05 , RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L .

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