ECH8402 Todos los transistores

 

ECH8402 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8402

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 82 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: ECH8

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ECH8402 datasheet

 ..1. Size:42K  sanyo
 ech8402.pdf pdf_icon

ECH8402

Ordering number ENN8148 ECH8402 N-Channel Silicon MOSFET General-Purpose Switching Device ECH8402 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 10 A Drain Current (Pulse) IDP PW 10

 9.1. Size:391K  1
 ech8420.pdf pdf_icon

ECH8402

ECH8420 Ordering number EN8993 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source

 9.2. Size:345K  sanyo
 ech8419.pdf pdf_icon

ECH8402

ECH8419 Ordering number ENA1886 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8419 Applications Features ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Sourc

 9.3. Size:286K  sanyo
 ech8410.pdf pdf_icon

ECH8402

ECH8410 Ordering number ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20

MOSTRAR MÁS

Otros transistores... SSM60T03H, SSM60T03J, EC4406C, EC4407KF, ECH8302, ECH8304, ECH8305, ECH8306, SKD502T, ECH8411, ECH8690, ECH8693R, ECH8695R, ECH8697R, EFC4619R, EFC4621R, EFC4626R

 

 

 

 

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