ECH8402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8402
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: ECH8
Búsqueda de reemplazo de ECH8402 MOSFET
ECH8402 Datasheet (PDF)
ech8402.pdf

Ordering number : ENN8148 ECH8402N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8402ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 10 ADrain Current (Pulse) IDP PW10
ech8420.pdf

ECH8420Ordering number : EN8993SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETECH8420 General-Purpose Switching DeviceApplicationsFeatures ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source
ech8419.pdf

ECH8419Ordering number : ENA1886SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8419ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Sourc
ech8410.pdf

ECH8410Ordering number : ENA1331SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8410ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20
Otros transistores... SSM60T03H , SSM60T03J , EC4406C , EC4407KF , ECH8302 , ECH8304 , ECH8305 , ECH8306 , IRF9540N , ECH8411 , ECH8690 , ECH8693R , ECH8695R , ECH8697R , EFC4619R , EFC4621R , EFC4626R .
History: 2SK2596 | BSO200P03S | TT8K11 | NP82N055NHE
History: 2SK2596 | BSO200P03S | TT8K11 | NP82N055NHE



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