ECH8402 - описание и поиск аналогов

Ordering number ENN8148 ECH8402 N-Channel Silicon MOSFET General-Purpose Switching Device ECH8402 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 10 A Drain Current (Pulse) IDP PW 10

ECH8420 Ordering number EN8993 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source

ECH8419 Ordering number ENA1886 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8419 Applications Features ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Sourc

ECH8410 Ordering number ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20

Ordering number ENA0073 ECH8411 N-Channel Silicon MOSFET General-Purpose Switching Device ECH8411 Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID 9 A Drain Current (Pulse) IDP