RFP40N10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RFP40N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP40N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220AB

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RFP40N10 datasheet

..1. Size:369K fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdf pdf_icon

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

..2. Size:841K cn vbsemi
rfp40n10.pdf pdf_icon

RFP40N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

0.1. Size:410K intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf pdf_icon

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr

9.1. Size:275K international rectifier
auirfp4004.pdf pdf_icon

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S

Otros transistores... RFP2N10L, RFP2N20, RFP2N20L, RFP3055, RFP3055LE, RFP30N06LE, RFP30P05, RFP30P06, SI2302, RFP40N10LE, RFP45N06, RFP45N06LE, RFP4N05L, RFP4N06L, RFP4N100, RFP50N05L, RFP50N06

RFP40N10 Todos los transistores