RFP40N10 Datasheet PDF and Equivalents Search

 ..1. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒

 ..2. Size:841K  cn vbsemi
 rfp40n10.pdf

RFP40N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un... See More ⇒

 0.1. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr... See More ⇒

 9.1. Size:275K  international rectifier
 auirfp4004.pdf

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S... See More ⇒

 9.2. Size:295K  international rectifier
 irfp4004pbf.pdf

PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35m l Hard Switched and High Frequency Circuits max. 1.70m G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug... See More ⇒

 9.3. Size:242K  inchange semiconductor
 irfp4004.pdf

isc N-Channel MOSFET Transistor IRFP4004 IIRFP4004 FEATURES Static drain-source on-resistance RDS(on) 1.7m Enhancement mode Vth =2.0 to 4.0V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply H... See More ⇒