EKI04027 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EKI04027
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 135 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 85 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 13.2 nS
Conductancia de drenaje-sustrato (Cd): 960 pF
Resistencia entre drenaje y fuente RDS(on): 0.0032 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET EKI04027
EKI04027 Datasheet (PDF)
eki04027.pdf
40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET EKI04027 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate
eki04027.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor EKI04027FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RATING
eki04036.pdf
40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET EKI04036 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 80 A D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate
eki04047.pdf
40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 80 A D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate
eki04036.pdf
isc N-Channel MOSFET Transistor EKI04036FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
eki04047.pdf
isc N-Channel MOSFET Transistor EKI04047FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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