EKI04027 PDF and Equivalents Search

 ..1. Size:246K  sanken-ele
 eki04027.pdf

40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET EKI04027 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate... See More ⇒

 ..2. Size:206K  inchange semiconductor
 eki04027.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor EKI04027 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RATING... See More ⇒

 8.1. Size:246K  sanken-ele
 eki04036.pdf

40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET EKI04036 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 80 A D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate... See More ⇒

 8.2. Size:246K  sanken-ele
 eki04047.pdf

40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features Package V(BR)DSS --------------------------------- 40 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 80 A D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate... See More ⇒

 8.3. Size:251K  inchange semiconductor
 eki04036.pdf

isc N-Channel MOSFET Transistor EKI04036 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 8.4. Size:250K  inchange semiconductor
 eki04047.pdf

isc N-Channel MOSFET Transistor EKI04047 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 5.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒