RFP40N10LE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RFP40N10LE
   Código: FP40N10L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 145 nC
   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO220AB

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RFP40N10LE Datasheet (PDF)

..1. Size:410K intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr

6.1. Size:369K fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

6.2. Size:841K cn vbsemi
rfp40n10.pdf

RFP40N10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

9.1. Size:295K international rectifier
irfp4004pbf.pdf

PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug

9.2. Size:275K infineon
auirfp4004.pdf

PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS

9.3. Size:295K infineon
irfp4004pbf.pdf

9.4. Size:242K inchange semiconductor
irfp4004.pdf

isc N-Channel MOSFET Transistor IRFP4004IIRFP4004FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =2.0 to 4.0V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyH

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