RFP40N10LE MOSFET Datasheet: N-Ch, 100V, 40A. Full specification with pinout and replacement list

RFP40N10LE Specs and Replacement

Type Designator: RFP40N10LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO220AB

RFP40N10LE substitution

- MOSFET ⓘ Cross-Reference Search

RFP40N10LE datasheet

..1. Size:410K intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf pdf_icon

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr... See More ⇒

6.1. Size:369K fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdf pdf_icon

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒

6.2. Size:841K cn vbsemi
rfp40n10.pdf pdf_icon

RFP40N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un... See More ⇒

9.1. Size:275K international rectifier
auirfp4004.pdf pdf_icon

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S... See More ⇒