RFP40N10LE
MOSFET. Datasheet pdf. Equivalent
Type Designator: RFP40N10LE
Marking Code: FP40N10L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 145
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO220AB
RFP40N10LE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFP40N10LE
Datasheet (PDF)
..1. Size:410K intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf 
RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr
6.1. Size:369K fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdf
RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti
6.2. Size:841K cn vbsemi
rfp40n10.pdf
RFP40N10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un
9.1. Size:295K international rectifier
irfp4004pbf.pdf
PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug
9.2. Size:275K infineon
auirfp4004.pdf
PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS
9.3. Size:295K infineon
irfp4004pbf.pdf
PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug
9.4. Size:242K inchange semiconductor
irfp4004.pdf
isc N-Channel MOSFET Transistor IRFP4004IIRFP4004FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =2.0 to 4.0V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyH
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