All MOSFET. RFP40N10LE Datasheet

 

RFP40N10LE Datasheet and Replacement


   Type Designator: RFP40N10LE
   Marking Code: FP40N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 145 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220AB
 

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RFP40N10LE Datasheet (PDF)

 ..1. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf pdf_icon

RFP40N10LE

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr

 6.1. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf pdf_icon

RFP40N10LE

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 6.2. Size:841K  cn vbsemi
 rfp40n10.pdf pdf_icon

RFP40N10LE

RFP40N10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 9.1. Size:275K  international rectifier
 auirfp4004.pdf pdf_icon

RFP40N10LE

PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS

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