All MOSFET. RFP40N10LE Datasheet


RFP40N10LE MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP40N10LE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220AB

RFP40N10LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search


RFP40N10LE Datasheet (PDF)

1.1. rfg40n10le rfp40n10le rf1s40n10lesm.pdf Size:410K _intersil


RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs • 40A, 100V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.040Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes appr

2.1. rfg40n10 rfp40n10 rf1s40n10-sm.pdf Size:369K _fairchild_semi


RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs • 40A, 100V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.040Ω the MegaFET process. This process, which uses feature • UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 5.1. irfp4004pbf.pdf Size:295K _upd-mosfet


PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35mΩ l Hard Switched and High Frequency Circuits max. 1.70mΩ G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug

Datasheet: RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 , IRFP260N , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE .

Back to Top