EKI10198 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EKI10198
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 116 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 47 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 57.7 nC
Tiempo de subida (tr): 6.5 nS
Conductancia de drenaje-sustrato (Cd): 300 pF
Resistencia entre drenaje y fuente RDS(on): 0.0184 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET EKI10198
EKI10198 Datasheet (PDF)
eki10198.pdf
100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 47 A D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat
eki10198.pdf
isc N-Channel MOSFET Transistor EKI10198FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
eki10126.pdf
100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 66 A D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate
eki10126.pdf
isc N-Channel MOSFET Transistor EKI10126FEATURESDrain Current I =66A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
eki10300.pdf
100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 34 A D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat
eki10300.pdf
isc N-Channel MOSFET Transistor EKI10300FEATURESDrain Current I =34A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 28.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
