EKI10300 Todos los transistores

 ..1. Size:246K  sanken-ele
 eki10300.pdf

100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 34 A D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

 ..2. Size:251K  inchange semiconductor
 eki10300.pdf

isc N-Channel MOSFET Transistor EKI10300 FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 28.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:246K  sanken-ele
 eki10198.pdf

100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 47 A D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

 9.2. Size:246K  sanken-ele
 eki10126.pdf

100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 66 A D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

 9.3. Size:251K  inchange semiconductor
 eki10198.pdf

isc N-Channel MOSFET Transistor EKI10198 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 18.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.4. Size:250K  inchange semiconductor
 eki10126.pdf

isc N-Channel MOSFET Transistor EKI10126 FEATURES Drain Current I =66A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 12.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo