Справочник MOSFET. EKI10300

 

EKI10300 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: EKI10300
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.4 ns
   Cossⓘ - Выходная емкость: 195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0288 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для EKI10300

 

 

EKI10300 Datasheet (PDF)

 ..1. Size:246K  sanken-ele
 eki10300.pdf

EKI10300 EKI10300

100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 34 A D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

 ..2. Size:251K  inchange semiconductor
 eki10300.pdf

EKI10300 EKI10300

isc N-Channel MOSFET Transistor EKI10300FEATURESDrain Current I =34A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 28.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:246K  sanken-ele
 eki10198.pdf

EKI10300 EKI10300

100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 47 A D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

 9.2. Size:246K  sanken-ele
 eki10126.pdf

EKI10300 EKI10300

100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 66 A D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

 9.3. Size:251K  inchange semiconductor
 eki10198.pdf

EKI10300 EKI10300

isc N-Channel MOSFET Transistor EKI10198FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.4. Size:250K  inchange semiconductor
 eki10126.pdf

EKI10300 EKI10300

isc N-Channel MOSFET Transistor EKI10126FEATURESDrain Current I =66A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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