ELM13416CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM13416CA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 328 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET ELM13416CA

ELM13416CA Datasheet (PDF)

..1. Size:652K elm
elm13416ca.pdf

Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)

7.1. Size:385K elm
elm13414ca.pdf

Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)

7.2. Size:785K elm
elm13419ca.pdf

P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)

7.3. Size:385K elm
elm13413ca.pdf

Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)

7.4. Size:388K elm
elm13418ca.pdf

Single N-channel MOSFETELM13418CA-SGeneral description Features ELM13418CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

7.5. Size:718K elm
elm13415ca.pdf

Single P-channel MOSFETELM13415CA-SGeneral description Features ELM13415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V)resistance. Internal ESD protection is included. Rds(on)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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