RFP45N06LE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP45N06LE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 142 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 150 nS
Cossⓘ - Capacitancia de salida: 640 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de RFP45N06LE MOSFET
- Selecciónⓘ de transistores por parámetros
RFP45N06LE datasheet
..2. Size:202K intersil
rfp45n06le rf1s45n06lesm.pdf 
RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level Features N-Channel Power MOSFETs 45A, 60V These are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those
6.1. Size:372K fairchild semi
rfg45n06 rfp45n06 rf1s45n06sm.pdf
RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs 45A, 60V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.028 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
9.2. Size:319K international rectifier
irfp4568pbf.pdf
PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit
9.3. Size:199K international rectifier
irfp450npbf.pdf
PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche
9.4. Size:101K international rectifier
irfp450a.pdf
PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
9.5. Size:381K international rectifier
auirfp4568-e.pdf
AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175 C Operating Temperature RDS(on) typ.4.8m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9m l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif
9.6. Size:159K international rectifier
irfp450lc.pdf
PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
9.7. Size:878K international rectifier
irfp450pbf.pdf
PD - 94852 IRFP450PbF Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2
9.8. Size:876K international rectifier
irfp450.pdf
PD - 94852 IRFP450PbF Lead-Free 11/17/03 Document Number 91233 www.vishay.com 1 IRFP450PbF Document Number 91233 www.vishay.com 2 IRFP450PbF Document Number 91233 www.vishay.com 3 IRFP450PbF Document Number 91233 www.vishay.com 4 IRFP450PbF Document Number 91233 www.vishay.com 5 IRFP450PbF Document Number 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package O
9.10. Size:121K international rectifier
irfp450n.pdf
PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Cur
9.11. Size:195K international rectifier
irfp450apbf.pdf
PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala
9.13. Size:276K st
irfp450.pdf
IRFP450 N-CHANNEL 500V - 0.31 - 14A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V
9.14. Size:729K fairchild semi
irfp450b.pdf
November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s
9.15. Size:942K samsung
irfp450a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.308 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
9.16. Size:129K vishay
irfp450n irfp450npbf.pdf
IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) ( )VGS = 10 V 0.37 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 Effect
9.17. Size:1566K vishay
irfp450lc sihfp450lc.pdf
IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration
9.18. Size:302K vishay
irfp450a sihfp450a.pdf
IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu
9.19. Size:1560K vishay
irfp450 sihfp450.pdf
IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (P
9.20. Size:1570K infineon
irfp450lc sihfp450lc.pdf
IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration
9.21. Size:549K infineon
auirfp4568.pdf
AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175 C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S
9.22. Size:309K infineon
irfp450a sihfp450a.pdf
IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu
9.23. Size:46K ixys
irfp450.pdf
IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A RDS(on) = 0.40 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by
9.24. Size:431K cn minos
irfp450.pdf
Silicon N-Channel Power MOSFET Description The IRFP450 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V, R
9.25. Size:213K inchange semiconductor
irfp4568pbf.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4568PBF FEATURES With TO-247packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
9.26. Size:236K inchange semiconductor
irfp453.pdf
isc N-Channel MOSFET Transistor IRFP453 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
9.27. Size:236K inchange semiconductor
irfp452.pdf
isc N-Channel MOSFET Transistor IRFP452 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
9.28. Size:243K inchange semiconductor
irfp4568.pdf
isc N-Channel MOSFET Transistor IRFP4568 IIRFP4568 FEATURES Static drain-source on-resistance RDS(on) 5.9m Enhancement mode Vth =3.0 to 5.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply
9.29. Size:236K inchange semiconductor
irfp451.pdf
isc N-Channel MOSFET Transistor IRFP451 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
9.30. Size:213K inchange semiconductor
irfp450.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in swit
9.31. Size:236K inchange semiconductor
irfp450r.pdf
isc N-Channel MOSFET Transistor IRFP450R FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
Otros transistores... RFP3055, RFP3055LE, RFP30N06LE, RFP30P05, RFP30P06, RFP40N10, RFP40N10LE, RFP45N06, 20N50, RFP4N05L, RFP4N06L, RFP4N100, RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03
