All MOSFET. RFP45N06LE Datasheet

 

RFP45N06LE MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP45N06LE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220AB

RFP45N06LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP45N06LE Datasheet (PDF)

1.1. rfp45n06le_rf1s45n06lesm.pdf Size:202K _intersil

RFP45N06LE
RFP45N06LE

RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level Features N-Channel Power MOSFETs • 45A, 60V These are N-Channel enhancement mode power MOSFETs • rDS(ON) = 0.028Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those

2.1. rfg45n06_rfp45n06_rf1s45n06sm.pdf Size:372K _fairchild_semi

RFP45N06LE
RFP45N06LE

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs • 45A, 60V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.028Ω power field effect transistors. They are advanced power • Temperature Compensating PSPICE® Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

5.1. irfp450.pdf Size:276K _st

RFP45N06LE
RFP45N06LE

IRFP450 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced grea

5.2. irfp450-1-2-3-fi.pdf Size:489K _st2

RFP45N06LE
RFP45N06LE

5.3. irfp450lc.pdf Size:159K _international_rectifier

RFP45N06LE
RFP45N06LE

PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.4. irfp450.pdf Size:876K _international_rectifier

RFP45N06LE
RFP45N06LE

PD - 94852 IRFP450PbF Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package Outlin

5.5. irfp450n.pdf Size:121K _international_rectifier

RFP45N06LE
RFP45N06LE

PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current

5.6. irfp450npbf.pdf Size:199K _international_rectifier

RFP45N06LE
RFP45N06LE

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

5.7. irfp450apbf.pdf Size:224K _international_rectifier

RFP45N06LE
RFP45N06LE

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

5.8. irfp450a.pdf Size:101K _international_rectifier

RFP45N06LE
RFP45N06LE

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

5.9. irfp450a.pdf Size:942K _samsung

RFP45N06LE
RFP45N06LE

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.10. irfp450a_sihfp450a.pdf Size:302K _vishay

RFP45N06LE
RFP45N06LE

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

5.11. irfp450_sihfp450.pdf Size:1560K _vishay

RFP45N06LE
RFP45N06LE

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (Pb)-free Available

5.12. irfp450lc_sihfp450lc.pdf Size:1566K _vishay

RFP45N06LE
RFP45N06LE

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration Single Repeti

5.13. irfp450.pdf Size:46K _ixys

RFP45N06LE
RFP45N06LE

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A ? RDS(on) = 0.40 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C14 A G = Gate, D = Drain, IDM TC = 25C, pulse width limited by TJM 56 A S = Source, T

Datasheet: RFP3055 , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , IRF9640 , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 .

 


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