RFP50N05L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP50N05L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de RFP50N05L MOSFET

- Selecciónⓘ de transistores por parámetros

 

RFP50N05L datasheet

 ..1. Size:161K  fairchild semi
 rfp50n05l.pdf pdf_icon

RFP50N05L

RFP50N05L Data Sheet August 2004 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

 ..2. Size:51K  intersil
 rfg50n05l rfp50n05l.pdf pdf_icon

RFP50N05L

RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum

 7.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf pdf_icon

RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 7.2. Size:74K  intersil
 rfp50n06.pdf pdf_icon

RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

MOSTRAR MÁS

Otros transistores... RFP30P06, RFP40N10, RFP40N10LE, RFP45N06, RFP45N06LE, RFP4N05L, RFP4N06L, RFP4N100, IRFZ24N, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05