RFP50N05L
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP50N05L
Código: F50N05L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 50
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10
V
|Id|ⓘ - Corriente continua de drenaje: 50
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2
V
Qgⓘ - Carga de la puerta: 140(max)
nC
trⓘ - Tiempo de subida: 50
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022
Ohm
Paquete / Cubierta:
TO220AB
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RFP50N05L
Datasheet (PDF)
..1. Size:161K fairchild semi
rfp50n05l.pdf 
RFP50N05LData Sheet August 200450A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,
..2. Size:51K intersil
rfg50n05l rfp50n05l.pdf
RFG50N05L, RFP50N05LData Sheet July 1999 File Number 2424.350A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSIintegrated circuits gives optimum
7.1. Size:373K fairchild semi
rfg50n06 rfp50n06 rf1s50n06sm.pdf
RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico
7.2. Size:74K intersil
rfp50n06.pdf
RFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilizati
7.3. Size:154K intersil
rfg50n06le rfp50n06le rf1s50n06lesm.pdf
RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa
7.4. Size:230K inchange semiconductor
rfp50n06.pdf
isc N-Channel MOSFET Transistor RFP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as swithingRegulators,switc
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