RFP50N05L. Аналоги и основные параметры

Наименование производителя: RFP50N05L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm

Тип корпуса: TO220AB

Аналог (замена) для RFP50N05L

- подборⓘ MOSFET транзистора по параметрам

 

RFP50N05L даташит

 ..1. Size:161K  fairchild semi
 rfp50n05l.pdf pdf_icon

RFP50N05L

RFP50N05L Data Sheet August 2004 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

 ..2. Size:51K  intersil
 rfg50n05l rfp50n05l.pdf pdf_icon

RFP50N05L

RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum

 7.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf pdf_icon

RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 7.2. Size:74K  intersil
 rfp50n06.pdf pdf_icon

RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

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