ELM17800GA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM17800GA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SC-70-6

Búsqueda de reemplazo de MOSFET ELM17800GA

ELM17800GA Datasheet (PDF)

..1. Size:411K elm
elm17800ga.pdf

Dual N-channel MOSFETELM17800GA-SGeneral description Features ELM17800GA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

9.1. Size:406K elm
elm17400fa.pdf

Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

9.2. Size:386K elm
elm17401fa.pdf

Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

9.3. Size:376K elm
elm17412ga.pdf

Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

9.4. Size:410K elm
elm17408ga.pdf

Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)

9.5. Size:593K elm
elm17600ga.pdf

Complementary MOSFET ELM17600GA-SGeneral Description Features ELM17600GA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Internal ESD Id=0.9A(Vgs=4.5V) Id=-0.6A(Vgs=-4.5V)protection is included. Rds(on)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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