ELM17800GA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM17800GA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 17 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: SC-70-6
Búsqueda de reemplazo de ELM17800GA MOSFET
- Selecciónⓘ de transistores por parámetros
ELM17800GA datasheet
elm17800ga.pdf
Dual N-channel MOSFET ELM17800GA-S General description Features ELM17800GA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V) operation with gate voltages as low as 1.8V and internal Rds(on)
elm17400fa.pdf
Single N-channel MOSFET ELM17400FA-S General description Features ELM17400FA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on)
elm17401fa.pdf
Single P-channel MOSFET ELM17401FA-S General description Features ELM17401FA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on)
elm17412ga.pdf
Single N-channel MOSFET ELM17412GA-S General description Features ELM17412GA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on)
Otros transistores... ELM16601EA, ELM16604EA, ELM16800EA, ELM17400FA, ELM17401FA, ELM17408GA, ELM17412GA, ELM17600GA, K3569, ELM18801BA, ELM18806BA, ELM18810BA, ELM18814BA, ELM18822BA, ELM24603HA, ELM24604HA, ELM321504A
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